Freescale Semiconductor
Technical Data
MRF5S21150H
Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2 - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1300 mA,
P
out
= 33 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 12.5 dB
Efficiency — 25%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Low Gold Plating Thickness on Leads, 40
μ
″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S21150HR3
MRF5S21150HSR3
2110 - 2170 MHz, 33 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
CASE 465B - 03, STYLE 1
NI - 880
MRF5S21150HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S21150HSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
CW
Value
- 0.5, +65
- 0.5, +15
380
2.2
- 65 to +150
150
200
150
0.84
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 33 W CW
Symbol
R
θJC
Value
(1,2)
0.46
0.47
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
MRF5S21150HR3 MRF5S21150HSR3
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 360
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1300 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3.6 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3.6 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
3.2
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
—
3.7
0.26
9
3.5
—
0.3
—
Vdc
Vdc
Vdc
S
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1300 mA, P
out
= 33 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3 measured in 3.84 MHz Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
—
—
11
23
12.5
25
- 37
- 39
- 12
—
—
- 35
- 37
-9
dB
%
dBc
dBc
dB
MRF5S21150HR3 MRF5S21150HSR3
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
R1
V
bias
+
C1
R2
C5
C6
Z6
RF
INPUT
Z1
C2
Z2
Z3
C4
Z4
C3
Z5
Z8
Z11
Z7
DUT
C8
C13
Z9
Z10
Z12
C9
C10
+
C11
+
C12
+
C20
V
supply
C19
Z13
Z14
C17
C18
Z15
Z16
Z17
RF
OUTPUT
C14
C7
+
C15
+
C16
ARCHIVE INFORMATION
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
Z9
0.500″ x 0.083″ Microstrip
0.505″ x 0.083″ Microstrip
0.536″ x 0.083″ Microstrip
0.776″ x 0.083″ Microstrip
0.119″ x 1.024″ Microstrip
0.749″ x 0.083″ Microstrip
0.117″ x 1.024″ Microstrip
0.117″ x 1.100″ Microstrip
Z10, Z11
Z12
Z13
Z14
Z15, Z16
Z17
PCB
0.709″ x 0.083″ Microstrip
0.415″ x 1.100″ Microstrip
0.874″ x 0.083″ Microstrip
1.182″ x 0.083″ Microstrip
0.070″ x 0.220″ Microstrip
0.430″ x 0.083″ Microstrip
Taconic TLX8, 0.030″,
ε
r
= 2.55
Figure 1. MRF5S21150HR3(HSR3) Test Circuit Schematic
Table 5. MRF5S21150HR3(HSR3) Test Circuit Component Designations and Values
Part
C1
C2, C6, C8, C9, C13, C18,
C19
C3,C4
C5, C7, C10, C14
C11, C12, C15, C16
C17
C20
R1, R2
Description
22
μF,
35 V Tantalum Capacitor
6.8 pF 100B Chip Capacitors
1.8 pF 100B Chip Capacitors
220 nF Chip Capacitors (1812)
10
μF,
35 V Tantalum Capacitors
0.3 pF Chip Capacitor
470
μF,
63 V Electrolytic Capacitor, Radial
10 kW, 1/4 W Chip Resistors
Part Number
TAJE226M035R
100B6R8CW
100B1R8BW
1812Y224KXA
293D1106X9035D
100B0R3BW
13661471
Manufacturer
AVX
ATC
ATC
Vishay - Vitramon
Vishay - Sprague
ATC
Philips
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
C1
C5
R1
C9
C10
C11 C12
C20
R2
C6
C19
CUT OUT AREA
C2
C4
C3
C8
C17
C18
ARCHIVE INFORMATION
C7
C13
C14
C15 C16
MRF5S21150
Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S21150HR3(HSR3) Test Circuit Component Layout
MRF5S21150HR3 MRF5S21150HSR3
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
13
12
G ps , POWER GAIN (dB)
11
10
9
8
7
6
IM3
ACPR
IRL
G
ps
η
D
V
DD
= 28 Vdc, P
out
= 33 W (Avg.), I
DQ
= 1300 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
35
30
25
20
−28
−32
−36
−40
−44
2220
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−10
−15
−20
−25
−30
ARCHIVE INFORMATION
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P
out
= 33 Watts Avg.
14
I
DQ
= 1900 mA
G ps , POWER GAIN (dB)
13
1600 mA
1300 mA
12
1000 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−25
−30
1900 mA
−35
I
DQ
= 700 mA
−40
−45
−50
−55
−60
−65
1
1000 mA
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
10
100
1000
1300 mA
1600 mA
11
700 mA
10
1
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
10
100
1000
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−25
−30
−35
−40
5th Order
−45
7th Order
−50
−55
−60
0.1
V
DD
= 28 Vdc, P
out
= 150 W (PEP), I
DQ
= 1300 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
1
10
100
3rd Order
Pout , OUTPUT POWER (dBm)
58
Ideal
56
P3dB = 53.41 dBm (219.28 W)
P1dB = 52.73 dBm (187.5 W)
Actual
52
V
DD
= 28 Vdc, I
DQ
= 1300 mA
Pulsed CW, 8
μsec(on),
1 msec(off)
f = 2140 MHz
37
39
41
43
45
47
54
50
48
35
TWO−TONE SPACING (MHz)
P
in
, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
5
2060
2080
2100
2120
2140
2160
2180
2200
IRL, INPUT RETURN LOSS (dB)
